Electro-optic device, electro-optic unit, and electronic apparatus

ABSTRACT

An electro-optic device includes a chip provided with a mirror and a drive element adapted to drive the mirror, a light-transmitting cover adapted to cover the mirror in a planar view, and a spacer having contact with one surface of the chip between the cover and the chip. The entire part of one surface of the chip having contact with the spacer is made of a firs material such as silicon oxide film having first thermal conductivity, and the spacer is made of a second material such as a quartz crystal having second thermal conductivity higher than the first thermal conductivity. The cover is made of a third material such as sapphire having third thermal conductivity higher than the second thermal conductivity.

This application is a continuation application of U.S. patentapplication Ser. No. 15/467,036 filed Mar. 23, 2017 which claims thebenefit of Japanese Patent Application No. 2016-065205 filed Mar. 29,2016. The disclosure of the prior applications is hereby incorporated byreference herein in their entirety.

BACKGROUND 1. Technical Field

The present invention relates to an electro-optic device equipped with amirror, an electro-optic unit, and an electronic device.

2. Related Art

As an electronic apparatus, there has been known, for example, aprojection-type display device, which modulates the light emitted from alight source using a plurality of mirrors (micro mirrors) of anelectro-optic device called a digital mirror device (DMD), and thenprojects the modulated light in an enlarged manner using a projectionoptical system to thereby display an image on a screen. Theelectro-optic device used for such a projection-type display deviceincludes, for example, a chip provided with mirrors and a drive elementfor driving the mirrors, a cover having a light transmissive propertyand covering the mirrors in a planar view, and a spacer located betweenthe cover and the chip, and the spacer has contact with the cover andthe chip. In the electro-optic device configured in such a manner, thelight from the light source is transmitted through the cover to enterthe mirrors, and the light reflected by the mirrors is transmittedthrough the cover, and is then emitted. Therefore, the cover rises intemperature due to the irradiation of the light, and the temperature ofthe chip rises accordingly. Further, while operating, the chip itselfalso generates heat. Such rise in temperature of the chip causes a falseoperation and a decrease in life of the electro-optic device, and istherefore undesirable.

Incidentally, as a method of improving the heat radiation performance ofa device mounted on a support substrate, there has been proposed aconfiguration in which a side surface of the spacer is covered withsealing resin, and at the same time, a surface of the sealing resin hascontact with the light-transmitting cover at a position higher than theposition at which the surface of the sealing resin has contact with thespacer (see U.S. Pat. No. B2-7,898,724 (Document 1)).

However, even if the heat-transfer efficiency from the cover to thesealing resin is improved with the configuration described in Document1, the thermal conductivity of the sealing resin itself is low, andtherefore, there is a problem that the rise in temperature of the chipcannot sufficiently be suppressed.

SUMMARY

An advantage of some aspects of the invention is to provide anelectro-optic device, an electro-optic unit, and an electronic apparatuseach capable of suppressing the rise in temperature of the chip providedwith the mirrors.

An electro-optic device according to an aspect of the invention includesa chip provided with a mirror and a drive element adapted to drive themirror, a light-transmitting cover adapted to cover the mirror in aplanar view, and a spacer located between the cover and the chip, andhaving contact with one surface of the chip, an entire part of the onesurface having contact with the spacer is made of a first materialhaving first thermal conductivity, and the spacer is made of a secondmaterial having second thermal conductivity higher than the firstthermal conductivity.

In the aspect of invention, the light is transmitted through the coverto enter the mirror, and the light reflected by the mirror istransmitted through the cover, and is then emitted. On this occasion,the cover rises in temperature due to the irradiation of the light.However, the spacer is made of the second material higher in thermalconductivity than the first material constituting the part of the onesurface of the chip having contact with the spacer. Therefore, the heatof the cover is hard to be transferred to the chip via the spacer.Further, the heat generated by the chip is easily released toward thespacer. Therefore, it is possible to suppress the rise in temperature ofthe chip.

The aspect of the invention may be configured to further include asealing material adapted to cover an entire side surface of the spacerand an entire side surface of the cover. According to such aconfiguration, it is possible to release the heat of the cover and theheat of the spacer to the sealing material.

The aspect of the invention may be configured such that the cover ismade of a third material having third thermal conductivity higher thanthe second thermal conductivity. According to such a configuration, itis possible to release the heat of the chip to the cover via the spacer.

The aspect of the invention may be configured such that the cover ismade of a third material having third thermal conductivity lower thanthe second thermal conductivity.

The aspect of the invention may be configured such that the spacer andthe cover are made of the same material.

In an electro-optic unit having the electro-optic device to which theinvention is applied, it is preferable to include a blower adapted tosupply air to the electro-optic device. According to such aconfiguration, since the heat of the electro-optic device canefficiently be released, deterioration of the reliability of theelectro-optic device and so on can be suppressed.

The electro-optic device to which the invention is applied can be usedfor a variety of electronic apparatuses, and in this case, theelectronic apparatus is provided with a light source section forirradiating the mirror with the source light. Further, in the case ofconfiguring a projection-type display device as the electronicapparatus, the electronic apparatus is further provided with aprojection optical system for projecting the light modulated by themirror.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is an explanatory diagram schematically showing an example of anoptical system provided to a projection-type display device to which theinvention is applied.

FIG. 2 is an explanatory diagram schematically showing an example of abasic configuration of an electro-optic device to which the invention isapplied.

FIG. 3 is an explanatory diagram schematically showing a cross-sectionalsurface in the periphery of a mirror of the electro-optic device towhich the invention is applied.

FIG. 4 is an explanatory diagram schematically showing a cross-sectionalsurface of the whole of the electro-optic device to which the inventionis applied.

FIG. 5 is a process cross-sectional view showing a method ofmanufacturing the electro-optic device to which the invention isapplied.

FIG. 6 is a process chart showing a method of manufacturing a secondwafer and so on used for the manufacture of the electro-optic device towhich the invention is applied.

FIG. 7 is a process cross-sectional view showing a process of sealing asubstrate with a board and sealing resin in a manufacturing process ofthe electro-optic device to which the invention is applied.

FIG. 8 is an explanatory diagram of an electro-optic unit to which theinvention is applied.

FIG. 9 is an explanatory diagram showing a blowing direction in theelectro-optic unit to which the invention is applied.

FIG. 10 is an explanatory diagram showing a blowing direction in anotherembodiment of the electro-optic unit to which the invention is applied.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

An embodiment of the invention will be described with reference to theaccompanying drawings. It should be noted that in the followingdescription, a projection-type display device will be explained as anelectronic apparatus to which the invention is applied. Further, in thedrawings referred to in following description, the scale ratios of thelayers and the members are made different from each other in order toprovide the layers and the members with the sizes in a recognizablerange on the drawings. Although the number of the mirrors and so onshown in the drawings is set so as to provide the size in therecognizable range on the drawings, it is also possible to provide alarger number of mirrors than the number of mirrors shown in thedrawings.

Projection-Type Display Device as Electronic Apparatus

FIG. 1 is an explanatory diagram schematically showing an example of anoptical system provided to a projection-type display device to which theinvention is applied. The projection-type display device 1000 (theelectronic apparatus) shown in FIG. 1 includes a light source section1002, an electro-optic device 100 for modulating the source lightemitted from the light source section 1002 in accordance with imageinformation, and a projection optical system 1004 for projecting thelight modulated by the electro-optic device 100 on a projection target1100 such as a screen to form a projected image. The light sourcesection 1002 is provided with a light source 1020 and a color filter1030. The light source 1020 emits white light as the source light, thecolor filter 1030 emits the light of the respective colors due to therotation, and the electro-optic device 100 modulates the incident lightat a timing synchronized with the rotation of the color filter 1030. Itshould be noted that it is possible to use a phosphor substrate, whichconverts the light emitted from the light source 1020 into the lightwith the respective colors, instead of the color filter 1030. Further,it is also possible to provide the light source section 1002 and theelectro-optic device 100 for the light with each of the colors.

Basic Configuration of Electro-Optic Device 100

FIG. 2 is an explanatory diagram schematically showing an example of thebasic configuration of the electro-optic device 100 to which theinvention is applied, and FIG. 2 also shows a partially explodedcondition. FIG. 3 is an explanatory diagram schematically showing across-sectional surface in the periphery of a mirror 50 of theelectro-optic device 100 to which the invention is applied, and FIG. 3shows the state in which the mirror 50 is tilted toward one side, andthe state in which the mirror 50 is tilted toward the other side.

As shown in FIG. 2 and FIG. 3, the electro-optic device 100 is providedwith a chip 2 having a plurality of mirrors 50 arranged in a matrix onone surface 1 s of an element substrate 1, and in the chip 2, themirrors 50 are separated from the element substrate 1. The elementsubstrate 1 is, for example, a silicon substrate. The mirrors 50 areeach, for example, a micromirror having a planar size of 10 through 30μm in each side. The mirrors 50 are arranged in, for example, a matrixof 800×600 through 1028×1024, and each of the mirrors 50 corresponds toone pixel of an image.

The surface of each of the mirrors 50 is a reflecting surface formed ofa reflecting metal film made of aluminum or the like. The chip 2 isprovided with a first layer part 100 a including substrate-side biaselectrodes 11, substrate-side address electrodes 12, 13, and so onformed on the one surface 1 s of the element substrate 1, a second layerpart 100 b including elevated address electrodes 32, 33 and hinges 35,and a third layer part 100 c including the mirrors 50. In the firstlayer part 100 a, the element substrate 1 is provided with an addressdesignation circuit 14. The address designation circuit 14 is providedwith memory cells for selectively controlling the operations of therespective mirrors 50, and interconnections 15 of word lines and bitlines, and has a circuit configuration similar to a RAM (random accessmemory) provided with a CMOS circuit 16.

The second layer part 100 b includes the elevated address electrodes 32,33, the hinges 35, and posts 51. The elevated address electrodes 32, 33are electrically connected to the substrate-side address electrodes 12,13 via the electrode posts 321, 331, and at the same time supported bythe substrate-side address electrodes 12, 13, respectively. Hinge arms36, 37 extend respectively from both ends of the hinge 35. The hingearms 36, 37 are electrically connected to the substrate-side biaselectrode 11 via an arm post 39, and at the same time supported by thesubstrate-side bias electrode 11. The mirror 50 is electricallyconnected to the hinge 35 via the mirror post 51, and at the same timesupported by the hinge 35. Therefore, the mirror 50 is electricallyconnected to the substrate-side bias electrode 11 via the mirror post51, the hinge the hinge arms 36, 37, and the arm post 39, and thus, thesubstrate-side bias electrode 11 applies a bias voltage to the mirror50. It should be noted that the tips of the hinge anus 36, 37 arerespectively provided with stoppers 361, 352 and stoppers 371, 372 forhaving contact with the mirror 50 to prevent the mirror 50 and theelevated address electrodes 32, 33 from having contact with each otherwhen the or 50 is tilted.

The elevated address electrodes 32, 33 constitute a drive element 30 forgenerating an electrostatic force with the mirror 50 to drive the mirror50 to tilt. Further, the substrate-side address electrodes 12, 13 arealso configured to generate an electrostatic force with the mirror 50 todrive the mirror 50 to tilt in some cases, and in such cases, it resultsthat the drive element 30 is constituted by the elevated addresselectrodes 32, 33 and the substrate-side address electrodes 12, 13. Thehinge 35 is twisted when the drive voltage is applied to the elevatedaddress electrodes 32, 33, and thus the mirror 50 is tilted so as to bedrawn by the elevated address electrode 32 or the elevated addresselectrode 33, and exerts a force to restore the mirror 50 to the postureparallel to the element substrate 1 when the drive voltage applied tothe elevated address electrodes 32, 33 stops to lose the attractiveforce to the mirror 50.

As shown in FIG. 3, in the electro-optic device 100, for example, whenthe mirror 50 tilts toward the elevated address electrode 32 on oneside, there occurs an ON state in which the light emitted from the lightsource section 1002 is reflected by the mirror 50 toward the projectionoptical system 1004. In contrast, when the mirror 50 tilts toward theelevated address electrode 33 on the other side, there occurs an OFFstate in which the light emitted from the light source section 1002 isreflected by the mirror 50 toward a light absorption device 1005, and insuch an OFF state, no light is reflected toward the projection opticalsystem 1004. Such drive is performed in each of the mirrors 50, and as aresult, the light emitted from the light source section 1002 ismodulated by the plurality of mirrors 50 into image light, and is thenprojected from the projection optical system 1004 to display an image.

It should be noted that in some cases, a plate-like yoke opposed to thesubstrate-side address electrodes 12, 13 is disposed integrally with thehinge 35, the mirror 50 is driven using an electrostatic force actingbetween the substrate-side address electrodes 12, 13 and the yoke inaddition to the electrostatic force generated between the elevatedaddress electrodes 32, 33 and the mirror 50.

Sealing Structure of Electro-Optic Device 100

FIG. 4 is an explanatory diagram schematically showing a cross-sectionalsurface of the whole of the electro-optic device 100 to which theinvention is applied. As shown in FIG. 4, in the electro-optic device100 according to the present embodiment, the one surface 1 s of theelement substrate 1 (the chip 2) provided with the plurality of mirrors50 describe with reference to FIG. 2 and FIG. 3 is sealed with a sealingmember 75 formed of a spacer 61 shaped like a frame and a cover 71shaped like a plate and having a light-transmitting property, then theelement substrate 1 (the chip 2) is fixed to a substrate mounting part93 of a board 90, and is then sealed with a sealing material 98. In theboard 90, the substrate mounting part 93 is formed as a bottomedrecessed part surrounded by a side plate part 92, and the elementsubstrate 1 is fixed to a bottom plate part 91 of the board 90 with anadhesive 97. In such a manner as described above, the mirrors 50 and thechip 2 are protected from moisture and so on.

In the present embodiment, the cover 71 covers the mirrors 50 in aplanar view, and the spacer 61 has contact with one surface 2 s of thechip 2 between the cover 71 and the chip 2. More specifically, an endpart 61 e of the spacer 61 located on the element substrate 1 side isbonded to the one surface 2 s of the chip 2, and has contact with theone surface 2 s of the chip 2. In the present embodiment, the onesurface 2 s of the chip 2 is formed of the one surface 1 s of theelement substrate 1. The cover 71 is bonded to an end part 61 f, whichis an end part of the spacer 61 located on the opposite side to the endpart opposed to the element substrate 1, and is supported by the endpart 61 f. In this state, the cover 71 is opposed to the surface of eachof the mirrors 50 at a position at a predetermined distance from themirrors 50. Therefore, the light enters the mirror 50 through the cover71, and then, the reflected by the mirror 50 is emitted through thecover 71.

On the one surface 1 s of the element substrate 1, a plurality ofterminals 17 is formed in an end part (outer side of the spacer 61) notoverlapping the mirrors 50. In the present embodiment, the terminals 17are arranged in two lines so as to sandwich the mirrors 50. Some of theterminals 17 are electrically connected to the elevated addresselectrodes 32, 33 (the drive element 30) via the address designationcircuit 14 and the substrate-side address electrodes 12, 13 describedwith reference to FIG. 2 and FIG. 3. Some of the rest of the terminals17 are electrically connected to the mirrors 50 via the addressdesignation circuit 14, the substrate-side bias electrodes 11, and thehinges 35 described with reference to FIG. 2 and FIG. 3. Some of therest of the terminals 17 are electrically connected to the drive circuitand so on disposed an anterior stage of the address designation circuit14 described with reference to FIG. 2 and FIG. 3.

Here, the terminals 17 are in an open state on the opposite side to theelement substrate 1, and are therefore electrically connected to theinternal terminals 94 formed on a surface 91 s of the bottom plate part91 of the board 90 located on the element substrate 1 side with wires 99for wire bonding. The bottom plate part 91 of the board 90 forms amultilayer interconnection board, and the internal terminals 94 areelectrically connected to external terminals 96 formed on an outersurface 91 t of the bottom plate part 91 located on the opposite side tothe element substrate 1 via the multilayer interconnection parts 95 eachformed of through holes and interconnections provided to the bottomplate part 91.

In the inside of the side plate part 92 (the recessed part) of the board90, there is disposed a sealing material 98 made of resin such as epoxyresin. The sealing material 98 covers the wires 99, bond parts betweenthe wires 99 and the terminals 17, bond parts between the wires 99 andthe internal terminals 94, the periphery of the element substrate 1, andthe periphery of a bonded part between the spacer 61 and the elementsubstrate 1, and at the same time covers the entire side surface 61 w(e.g., a surface for connecting the end part of the spacer 61 opposed tothe element substrate 1 and the end part 61 f as an end part located onthe opposite side to each other) of the spacer 61, and the entire sidesurface 71 w (e.g., a surface for connecting the surface of the cover 71opposed to the element substrate 1 and the surface on the opposite sideto each other) of the cover 71.

First Configuration example of Countermeasure Against Heat Generation

In the electro-optic device 100 configured as described above, the cover71 rises in temperature due to the irradiation of light, and if suchheat is transferred to the chip 2, the temperature of the chip 2 rises,and the reliability deteriorates. Therefore, in the present embodiment,the magnitude relation in thermal conductively between the chip 2, thespacer 61, and the cover 71 is set in advance as described hereinafter.

Firstly, in the one surface 2 s of the chip 2, the entire part havingcontact with the spacer 61 is made of a first material having firstthermal conductivity. In the present embodiment, the one surface 2 s ofthe chip 2 is formed of the one surface 1 s of the element substrate 1,and the entire part having contact with the spacer 61 in the one surface1 s is formed of a silicon oxide film (the first material) depositedwhen forming the address designation circuit 14 (see FIG. 2) and so onusing a semiconductor process. The thermal conductivity (the firstthermal conductivity) of the silicon oxide film (the first material)equal to or lower than 3.0 W/(m·K).

The spacer 61 is made of a second material having second thermalconductivity higher than the thermal conductivity (the first thermalconductivity) of the silicon oxide film (the first material). In thepresent embodiment, the spacer 61 is made of a quartz crystal (thesecond material), and the thermal conductivity (the second thermalconductivity) of the quartz crystal (the second material) is about 8.0W/(m·K).

In the present embodiment, the cover 71 is made of a third materialhaving third thermal conductivity higher than the thermal conductivity(second thermal conductivity) of the quart crystal (the secondmaterial). In the present embodiment, the cover 71 is made of sapphire(the third material), and the thermal conductivity (the third thermalconductivity) of sapphire (the third material) is about 42 W/(m·K).

Therefore, in the present embodiment, the thermal conductivities havethe following relation.

(one surface 2s of chip 2)<(spacer 61)<(cover 71)

Therefore, the heat of the cover 71 is hard to be transferred to thechip 2 via the spacer Further, while operating, although the chip 2itself generates heat, the heat generated in the chip 2 is easilyreleased to the cover 71 side via the spacer 61. Therefore, since therise in temperature of the chip 2 can be suppressed, reliability ref thechip 2 and the electro-optic device 100 can be improved.

Further, in the present embodiment, the sealing material 98 covers theone surface 2 s of the chip 2 on the outer side of the spacer 61.Therefore, it is possible to release the heat of the chip 2 to thesealing material 98. Further, the sealing material 98 covers the entireside surface 61 w of the spacer 61 and the entire side surface 71 w ofthe cover 71. Therefore, it is possible to release the heat of the cover71 and the heat of the spacer 61 to the sealing material 98.

Second Configuration Example of Countermeasure Against Heat Generation

In order to reduce the rise in temperature of the chip 2, the followingconfiguration can also be adopted. Firstly, the whole of the part havingcontact with the spacer 61 in the one surface 2 s (the one surface 1 sof the element substrate 1) of the chip 2 is formed of a silicon oxidefilm (a first material), and the thermal conductivity (first thermalconductivity) of the silicon oxide film (the first material) is equal toor lower than 3.0 W/(m·K).

The spacer 61 is made of a second material having second thermalconductivity higher than the thermal conductivity (the first thermalconductivity) of the silicon oxide film (the first material). In thepresent embodiment, the spacer 61 is made of sapphire (a secondmaterial), and the thermal conductivity (second thermal conductivity) ofsapphire (the second material) is about 42 W/(m·K).

The cover 71 is made of a third material having third thermalconductivity lower than the thermal conductivity (the second thermalconductivity) of sapphire (the second material) In the presentembodiment, the cover 71 is made of a quartz crystal (a third material),and the thermal conductivity (third thermal conductivity) of the quartzcrystal (the third material) is about 8.0 W/(m·K). Therefore, thethermal conductivity(the third thermal conductivity) of the cover 71 ishigher than the thermal conductivity (the first thermal conductivity) ofthe one surface 2 s of the chip 2.

Therefore, in the present embodiment, the thermal conductivities havethe following relation.

(one surface 2s of chip 2)<(cover 71)<(spacer 61)

Therefore, similarly to the first configuration example, the heat of thecover 71 is hard to be transferred to the chip 2 via the spacer 61.Further, while operating, although the chip 2 itself generates heat, theheat generated in the chip 2 is easily released to the spacer 61.Therefore, since the rise in temperature of the chip 2 can besuppressed, reliability of the chip 2 and the electro--optic device 100can be improved.

Further, in the present embodiment, the sealing material 98 covers theone surface 2 s of the chip 2 on the outer side of the spacer 61.Therefore, it is possible to release the heat of the chip 2 to thesealing material 98. Further, the sealing material 98 covers the entireside surface 61 w of the spacer 61 and the entire side surface 71 w ofthe cover 71. Therefore, it is possible to release the heat of the cover71 and the heat of the spacer 61 to the sealing material.

Third Configuration Example of Countermeasure Against Heat Generation

In order to reduce the rise in temperature of the chip 2, the followingconfiguration can also be adopted. Firstly, the whole of the part havingcontact the spacer 61 in the one surface 2 s (the one surface 1 s of theelement substrate 1) of the chip 2 is formed of the silicon oxide film(a first material), and the thermal conductivity (first thermalconductivity) of the silicon oxide film (the first material) as equal toor lower than 3.0 W/(m·K).

The spacer 61 is made of a second mater having second thermalconductivity higher than the thermal conductivity (the first thermalconductivity) of the silicon oxide film (the first material). In thepresent embodiment, the spacer 61 is made of sapphire (a secondmaterial), and the thermal conductivity (second thermal conductivity) ofsapphire (the second material) is about 42 W/(m·K). The cover 71 is madeof the same material (sapphire) as that of the spacer 61. Further, it isalso possible to form both of the spacer 61 and the cover 71 usingsapphire.

Therefore, in the present embodiment, the thermal conductivities havethe following relation.

(one surface 2s of chip 2)<(spacer 61)=(cover 71)

Therefore, similarly to the first configuration example, the heat of thecover 71 is hard to be transferred to the chip 2 via the spacer 61.Further, while operating, although the chip 2 itself generates heat, theheat generated in the chip 2 is easily released to the spacer 61 and thecover 71. Therefore, since the rise in temperature of the chip 2 can besuppressed, reliability of the chip 2 and the electro-optic device 100can be improved.

Further, in the present embodiment, the sealing material 98 covers theone surface 2 s of the chip 2 on the outer side of the spacer 61.Therefore, it is possible to release the heat of the chip 2 to thesealing material 98. Further, the sealing material 98 covers the entireside surface 61 w of the spacer 61 and the entire side surface 71 w ofthe cover 71. Therefore, it is possible to release the heat of the cover71 and the heat of the spacer 61 to the sealing material 98.

It should be noted that since in the present example, the spacer 61 andthe cover 71 are made of the same material, it is also possible to usethe sealing member 75 having the spacer 61 and the cover 71 integratedwith each other.

Method of Manufacturing Electro-optic Device 100

A method of manufacturing the electro-optic device 100 to which theinvention is applied will be described with reference to FIG. 5, FIG. 6,and FIG. 7. FIG. 5 is a process cross-sectional view showing the methodof manufacturing the electro-optic device 100 to which the invention isapplied. FIG. 6 is a process chart showing a manufacturing method of asecond wafer 20 and so on used in the manufacture of the electro-opticdevice 100 to which the invention is applied, and FIG. 6 shows a planview of the wafer in each process, and at the same time shows across-sectional view below the plan view. FIG. 7 is a processcross-sectional view showing a process of sealing the element substrate1 with the board 90 and the sealing material 98 in the manufacturingprocess of the electro-optic device 100 to which the invention isapplied. In FIG. 6, illustration of the mirrors 50 and so on is omitted,and in FIG. 5, it is assumed that the number of mirrors 50 is decreasedcompared to FIG. 4, and three mirrors 50 are provided to one elementsubstrate 1.

In the present embodiment, a plurality of element substrates 1 and so onare obtained from a wafer with multi-piece processing. Therefore, in thefollowing description, among the plurality of element substrates 1obtained with the multi-piece processing, the mirrors 50 and theterminals 17, which are formed in an area where one substrate isobtained, are described attaching “a” to the back of each of thereference symbols like “first mirrors 50 a” and “first terminals 17 a.”Further, among the plurality of element substrates 1, the mirrors 50 andthe terminals 17, which are formed in an area adjacent to the area wherethe first mirrors 50 a and the first terminals 17 a are formed, aredescribed attaching “b” to the back of each of the reference symbolslike “second mirrors 50 b” and “second terminals 17 b.” It should benoted that in the case in which there is no need to specify whichelement substrate 1 is mentioned, the description will be presentedwithout attaching “a” or “b” described above

In order to manufacture the electro-optic device 100 according to thepresent embodiment, in the process a5 shown in FIG. 5 and the processesa6, b6 (a first wafer preparatory process) shown in FIG. 6, there isprepared a first wafer 10, which is large in size, and with which themulti-piece processing of the element substrates 1 can be realized,wherein the mirrors 50 and the terminals 17 are formed in each of theareas which are divided to obtain the element substrates 1, of onesurface 10 s (a first surface) of the first wafer 10.

Therefore, on the one surface 10 s of the first wafer 10, the firstmirrors 50 a are formed, and at the same time, the first terminals 17 aelectrically connected to the first drive element 30 a (see FIG. 2 andFIG. 3) for driving the first mirrors 50 a are formed at positionsadjacent to the first mirrors 50 a in a planar view. Further, on the onesurface 10 s of the first wafer 10, there are formed the second mirrors50 b on the opposite side to the first mirrors 50 a with respect to thefirst terminals 17 a, and at the same time, there are formed the secondterminals 17 b electrically connected to the second drive element 30 b(see FIG. 2 and FIG. 3) for driving the second mirrors 50 b between thefirst terminals 17 a and the second mirrors 50 b.

Further, in the process a5 (a second wafer forming process) shown inFIG. 5, there is prepared a second wafer 20, which is large in size, andwith which the multi-piece processing of the spacers 61 and the covers71 can be realized. On a second surface 20 s formed of one surface ofthe second wafer 20, a recessed part 21, the bottom part of which has alight-transmitting property, formed in each of the areas which aredivided to obtain the spacers 61 and the covers 71, and at the sametime, there are formed grooves 22 each having a bottom and extending intwo directions perpendicular to each other to surround each of therecessed parts 21. One of the recessed parts 21 corresponds to a firstrecessed part 21 a, and the recessed part 21 adjacent to the firstrecessed part 21 a corresponds to a second recessed part 21 b.Therefore, on the second surface 20 s of the second wafer 20, there areformed the first recessed part 21 a, the bottom part of which has alight-transmitting property, the second recessed part 21 b, the bottompart of which has a light-transmitting property, and the grooves 22 eachhaving a bottom and extending along the space between the first recessedpart 21 a and the second recessed part 21 b.

When forming such a second wafer 20, in the second wafer formingprocess, for example, the processes c6 through f6 shown in FIG. 6 areperformed. Firstly, in the process c6, there is prepared alight-transmitting wafer 70 (a fourth wafer), with which the multi-pieceprocessing of the covers 71 can be realized. Further, in the process d6,a wafer-for-spacers 60 (a third wafer) with which the multi-pieceprocessing of the spacers 61 can be realized is prepared, and then, inthe first process, through holes 66 for forming the recessed parts 21are formed in the wafer-for-spacers 60 using a process such as etching.One of the through holes 66 corresponds to a first through hole 66 a forforming the first recessed part 21 a, and the through hole 66 adjacentto the first through hole 66 a corresponds to a second through hole 66 bfor forming the second recessed part 21 b. Then, in the process e6, thegrooves 22 each having a bottom and extending in the two directionsperpendicular to each other to surround each of the recessed parts 21are formed using a process such as half etching. It should be noted thatalthough in the first process, the through holes 66 are formed and thenthe grooves 22 are formed, it is also possible to form the grooves 22and then form the through holes 66.

Then, in the second process, as shown in the process f6, thelight-transmitting wafer 70 is stacked on and bonded to a surface 60 tof the wafer-for-spacers 60 located on the opposite side to a surface 60s on which the grooves 22 open. As a result, the second wafer 20 havingthe wafer-for-spacers 60 and the light-transmitting wafer 70 stacked onone another is formed, and in such a second wafer 20, the surface 60 sof the wafer-for-spacers 60 forms the second surface 20 s of the secondwafer 20, and the surface of the light-transmitting wafer 70 located onthe opposite side to the wafer-for-spacers 60 forms a third surface 20 tof the second wafer 20. Further, one opening ends of the through holes66 (the first through hole 66 a and the second through hole 66 b) areblocked by the light-transmitting wafer 70 to form the recessed parts 21(the first recessed part 21 a and the second recessed part 21 b), thebottom parts of which have a light-transmitting property.

Then, in the bonding process, in the process b5 shown in FIG. 5, the onesurface 10 s of the first wafer 10 and the second surface 20 s of thesecond wafer 20 are bonded to each other so that the recessed parts 21overlap the mirrors 50 in a planar view (e.g., the planar view whenviewing the first wafer 10 from the one surface 10 s side), and thegrooves 22 overlap the terminals 17. As a result, the first recessedpart 21 a overlaps the first mirrors 50 a in the planar view, the secondrecessed part 21 b overlaps the second mirrors 50 b in the planar view,the common groove 22 overlaps the first terminals 17 a, the secondterminals 17 b, and an area sandwiched by the first terminals 17 a andthe second terminals 17 b in the planar view. In this state, the partsandwiched by the first recessed part 21 a and the groove 22 in thesecond wafer 20 is bonded to the area between the first mirrors 50 a andthe first terminals 17 a, and the part sandwiched by the second recessedpart 21 b and the groove 22 in the second wafer 20 is bonded to the areabetween the second mirrors 50 b and the second terminals 17 b.Therefore, the first terminals 17 a and the second terminals 17 b arenot bonded to the second wafer 20.

Then, in the process c5 (a second wafer dicing process) shown in FIG. 5,a dicing blade-for-second wafer 52 (a first dicing blade) is made toapproach from the third surface 20 t, which is formed of a surface ofthe second wafer 20 located on the opposite side to the second surface20 s, to dice the second wafer 20 along the grooves 22. As a result, thesecond wafer 20 is divided, the cover 71 is constituted by a plate partobtained by dividing the light-transmitting wafer 70 out of the secondwafer 20, and the spacer 61 is constituted by a frame part obtained bydividing the wafer-for-spacers 60. In the present embodiment, thethickness W2 of the dicing blade-for-second wafer 82 is equivalent tothe width W0 of the groove 22.

Then, in the process d5 (a first wafer dicing process) shown in FIG. 5,the first wafer 10 is diced along the area (the area sandwiched by thefirst terminals 17 a and the second terminals 17 b) which are divided toobtain the element substrates 1 using a dicing blade-for-first wafer 81(a second dicing blade). As a result, the first wafer 10 is diced in thearea between the first terminals 17 a and the second terminals 17 b. Inthe present embodiment, the thickness W1 of the dicing blade-for-firstwafer 81 is thinner than the thickness W2 of the dicing blade-for-secondwafer 82. Therefore, in the first wafer dicing process, the dicingblade-for-first wafer 81 is made to approach the cut place (an areabetween the covers 71 adjacent to each other, and an area between thespacers 61 adjacent to each other) of the second wafer 20 from the sideof the second wafer 20 with respect to the first wafer 10 to dice thefirst wafer 10.

As a result, there is manufactured a plurality of electro-optic devices100 each having the element substrate 1, which is provided with themirrors 50 formed on the one surface 1 s, and the one surface 1 s ofwhich is sealed with the spacer 61 and the cover 71. In the case offurther sealing such an electro-optic device 100 with the board 90 andthe sealing material 98 as shown in FIG. 4, the process shown in FIG. 7is performed.

Firstly, in the process a7 shown in FIG. 7, the board 90 having thesubstrate mounting part 93 formed as the recessed part surrounded by theside plate part 92 is prepared, and then in the process b7 shown in FIG.7, the element substrate 1 is fixed to the bottom part of the substratemounting part 93 with the adhesive 97. Then, in the process c7 shown inFIG. 7, the terminals 17 on the element substrate 1 and the internalterminals 94 on the board 90 are electrically connected to each otherwith the wires 99 for wire bonding. Then, as shown in FIG. 4, thesealing material 98 is poured inside the side plate part 92 of the board90, and then the sealing material 98 is made to cure to seal the elementsubstrate 1 with the sealing material 98. As a result, it is possible toobtain the electro-optic device 100 having the element substrate 1sealed with the spacer 61, the cover 71, the board 90, and the sealingmaterial 98.

Configuration of Electro-Optic Unit 180

FIG. 8 is an explanatory diagram of an electro-optic unit 180 to whichthe invention is applied. FIG. 9 is an explanatory diagram showing ablowing direction in the electro-optic unit 180 to which the inventionis applied. FIG. 10 is an explanatory diagram showing a blowingdirection in another embodiment of the electro-optic unit 180 to whichthe invention is applied.

When using the electro-optic device 100 described with reference to FIG.2 through FIG. 7 for the projection-type display device 1000 shown inFIG. 1 or the like, in the present embodiment, the electro-optic unit180 is constituted by the electro-optic device 100, and a blower 190 forsupplying air to the electro-optic device 100 as shown in FIG. 8 andFIG. 9. The size of the electro-optic device 100 according to thepresent embodiment in the Y direction, in which the terminals 17 areopposed to each other across the cover 71, is smaller than the size ofthe electro-optic device 100 in the X direction, in which the terminals17 are arranged, and in the present embodiment, the blower 190 feeds theair from the Y direction in which the size of the electro-optic device100 is smaller.

It should be noted that as shown in FIG. 10, it is also possible toadopt a configuration in which the blower 190 feeds the air from the Xdirection in which the size of the electro-optic device 100 is larger.

1-7. (canceled)
 8. A manufacturing method of an electro-optic devicecomprising: preparing a first wafer that has a first surface on which afirst mirror, a second mirror, a first terminal and a second terminalare formed, the first terminal being connected to a first drive elementfor driving the first mirror, the first terminal being formed at aposition adjacent to the first mirror, the second mirror being formed onan opposite side to the first mirror with respect to the first terminal,the second terminal being connected to a second drive element fordriving the second mirror, and the second terminal being formed betweenthe first terminal and the second mirror; preparing a second wafer thathas a second wafer surface on which a first recessed part and a secondrecessed part are formed, a bottom part of the first recessed parthaving a light-transmitting property, a bottom part of the secondrecessed part having a light-transmitting property; bonding the secondwafer to a first part in the first surface of the first wafer such thatfirst recessed part overlaps the first mirror and the second recessedpart overlaps the second mirror; and dicing the first wafer along anarea between the first terminal and the second terminal, wherein, afterthe dicing of the first wafer, an entire part of the first part is madeof a first material having first thermal conductivity and a second partof the second wafer is made of a second material having second thermalconductivity higher than the first thermal conductivity,
 9. Amanufacturing method of an electro-optic device comprising: preparing anelement substrate, a light-transmitting cover and a spacer, a firstsurface of the element substrate being provided with a mirror, thelight-transmitting cover covering the mirror, the spacer being locatedbetween the element substrate and the light-transmitting cover, thespacer being in contact with a first part of the first surface; andfixing the element substrate to a board; wherein an entire part of thefirst part is made of a first material having first thermalconductivity, the spacer is made of a second material having secondthermal conductivity higher than the first thermal conductivity.
 10. Themanufacturing method of the electro-optic device according to claim 9,further comprising: pouring a sealing material such that the sealingmaterial covers an entire side surface of the spacer and an entire sidesurface of the cover.
 11. The manufacturing method of the electro-opticdevice according to claim 9, wherein the cover is made of a thirdmaterial having third thermal conductivity higher than the secondthermal conductivity.
 12. The manufacturing method of the electro-opticdevice according to claim 9, wherein the cover is made of a thirdmaterial having third thermal conductivity lower than the second thermalconductivity.
 13. The manufacturing method of the electro-optic deviceaccording to claim 9, wherein the spacer and the cover are made of asame material.